Metrosemi

FSM 500TC

Stress Hysteresis Measurement up to 500C for thermal property and stability tests of thin films during thermal cycling up to 500 degrees C in inert gas. Non-Contact Laser Scanning Technology.
The FSM 500TC High Temperature system helps researcher The FSM 500TC High Temperature system helps researcher and process engineers evaluate the thermal properties and and process engineers evaluate the thermal properties and stability of thin films in semiconductor, III-V, Optoelectronics and stability of thin films in semiconductor, III-V, Optoelectronics and MEMs materials subjected to thermal cycles. Information MEMs materials subjected to thermal cycles. Information obtained from these characterization, facilitates the detection of obtained from these characterization, facilitates the detection of problems such as film cracking, voiding and hillock formation, problems such as film cracking, voiding and hillock formation, which could lead to critical reliability issues during the which could lead to critical reliability issues during the manufacturing process. The tool is crucial to gauge the maturity manufacturing process. The tool is crucial to gauge the maturity of a new process or new materials before they are released for of a new process or new materials before they are released for production.

Features

  • Film Stress & Wafer Bow Measurements.
  • Auto Dual Lasers and Long Z Detector.
  • Stress Range : 1 MPa to 1.4 GPa.
  • Wafer size & Shape: round, square, rectangular (20 mm to 300mm ).
  • Inert gas purge : Nitrogen or Argon.
  • Software : Film Stress ( ambient), Film Stress vs Temp, Wafer bow vs temperature, Programmable Heating or annealing, export of graphs as jpeg files, data to excel.
  • Temperature Range:
    Ambient to 500 deg C:
    Option: Ambient to 65 deg C

Derigned for

  • Versatility
    • The FSM SOOTC 300mm accommodates 50 to 300mm wafer without the need io change sample holder, ot jig. Stress. and Jaler bow measurements ean Be evaluated at room or high temperature
  • Simple Sample Placement + Retrieval
    • On the FSM SO0TC 300mm is simple using on pis for repradusibe operations
  • Auto Switching Dual Laser
    • The FSM SOOTC 300mm fetes a patented ato dul laser echo epever sample relletvity tspoor, the system will switch to an emnate laver with different wavelenath. This enable the end user to measure almost any type of film inchudine nitrides, polyimides, low k and high k materials, oe metas, without problems
  • Programmable Temperature Cycle
    • Recipes for heat cycles are programmable for single or multiple heat runs with the possibility of different temperature ramping.ates and annealing temperatures fo evaluate thermal stability of thin film materials

Specifications

Operating temperatureAmbient to 500°C
Heating techniqueHost chuck with resistive heating elements
(Chucks sir cooled)
BenefitFlexibility to measure a variety of sample types, including 50 – 300 mm wafers, coupons, and sputtering targets (up to 30 kg)
Measurement techniqueNon-contact laser scanning
Wealer size50 to 300mm wafers dia.
Scanning methodHigh precision single line sean
Temperature ramp rate1 to 35℃ minute, programmable.
Heat cycle may include ramp and hold
Auto intensityAutomatically adjusts laser intensity according to reflectivity of samples
Auto switching dual lasers650nm and 780nm
Film stress measurement range1 MPa to 4 GPa for atypical Si wafer
(provided bow” height change is atleast 4ym)
Minimum radius2m for 8 300mm wafer
Repeatability1% (1 sigma) on a 20m curvature mirror standard?
AccuracyBetter than 2.5% based on 8 20m radius curvature miror
Laser classLaser Product Class 1
Data compatibilityMeasurement rosuts or graphs are exportable to spreadsheet programs like Excel” or to jpeg image files
Purging gasNitrogen, argon or forming gas
ComputerCPU: intl core iS or better
Ram: 2Gb min
hard drive: 17
optical drive: DVO RW
USB Port (Min) 4
ethernet connections: 2 RJ-45
Dimensions & weight39° x22 5″ x 24.5″ 350Ibs
Power208V; 20A, 1 phase

Water Bow is defined as the deviation of the center point of the front surface of a free, unclamped wafer supported by 3 points equally spaced on a circle within te ameter a spected amount ess than the nominal ameter fhe + Actual Repeatability or Accuracy of fle stress depends on the type of fim, thickness of the fle and substrate

Excol™ isthe trademark of Microsoft Corporation

Comparison FSM128NT, FSM 500TC and FSM500TC-VAC

TOPIC

128NT

500TC

500TC-VAC

T rangeRoom temperatureRoom temperature up to 500°CRoom temperature up to 500°C

Environment

Ambient

Inert gas

Inert gas Vacuum

2D and 3D Stress Mapping

Automatic wafer rotation

Manual wafer rotation

Automatic wafer rotation optional

Turn-around time

Minutes

Heating and cooling cycle typically hours (depending on process)

Heating and cooling cycle typically hours (depending on process)

Options

Substrate thickness

Reflectivity

Thermal Desorption Spectroscopy (TDs) Reflectivity Film Thickness Resistivity

Typical Application

Fast process control Stress Mapping

Process Development Annealing studies,CTE

Process Development Annealing outgassing studies, CTE

Facilities

Power

Power, gas, exhaust

Power, gas, exhaust