FSM 500TC
Stress Hysteresis Measurement up to 500C for thermal property and stability tests of thin films during thermal cycling up to 500 degrees C in inert gas. Non-Contact Laser Scanning Technology.
The FSM 500TC High Temperature system helps researcher The FSM 500TC High Temperature system helps researcher and process engineers evaluate the thermal properties and and process engineers evaluate the thermal properties and stability of thin films in semiconductor, III-V, Optoelectronics and stability of thin films in semiconductor, III-V, Optoelectronics and MEMs materials subjected to thermal cycles. Information MEMs materials subjected to thermal cycles. Information obtained from these characterization, facilitates the detection of obtained from these characterization, facilitates the detection of problems such as film cracking, voiding and hillock formation, problems such as film cracking, voiding and hillock formation, which could lead to critical reliability issues during the which could lead to critical reliability issues during the manufacturing process. The tool is crucial to gauge the maturity manufacturing process. The tool is crucial to gauge the maturity of a new process or new materials before they are released for of a new process or new materials before they are released for production.
Features
- Film Stress & Wafer Bow Measurements.
- Auto Dual Lasers and Long Z Detector.
- Stress Range : 1 MPa to 1.4 GPa.
- Wafer size & Shape: round, square, rectangular (20 mm to 300mm ).
- Inert gas purge : Nitrogen or Argon.
- Software : Film Stress ( ambient), Film Stress vs Temp, Wafer bow vs temperature, Programmable Heating or annealing, export of graphs as jpeg files, data to excel.
- Temperature Range:
Ambient to 500 deg C:
Option: Ambient to 65 deg C
Derigned for
- Versatility
- The FSM SOOTC 300mm accommodates 50 to 300mm wafer without the need io change sample holder, ot jig. Stress. and Jaler bow measurements ean Be evaluated at room or high temperature
- Simple Sample Placement + Retrieval
- On the FSM SO0TC 300mm is simple using on pis for repradusibe operations
- Auto Switching Dual Laser
- The FSM SOOTC 300mm fetes a patented ato dul laser echo epever sample relletvity tspoor, the system will switch to an emnate laver with different wavelenath. This enable the end user to measure almost any type of film inchudine nitrides, polyimides, low k and high k materials, oe metas, without problems
- Programmable Temperature Cycle
- Recipes for heat cycles are programmable for single or multiple heat runs with the possibility of different temperature ramping.ates and annealing temperatures fo evaluate thermal stability of thin film materials
Specifications
| Operating temperature | Ambient to 500°C |
| Heating technique | Host chuck with resistive heating elements (Chucks sir cooled) |
| Benefit | Flexibility to measure a variety of sample types, including 50 – 300 mm wafers, coupons, and sputtering targets (up to 30 kg) |
| Measurement technique | Non-contact laser scanning |
| Wealer size | 50 to 300mm wafers dia. |
| Scanning method | High precision single line sean |
| Temperature ramp rate | 1 to 35℃ minute, programmable. Heat cycle may include ramp and hold |
| Auto intensity | Automatically adjusts laser intensity according to reflectivity of samples |
| Auto switching dual lasers | 650nm and 780nm |
| Film stress measurement range | 1 MPa to 4 GPa for atypical Si wafer (provided bow” height change is atleast 4ym) |
| Minimum radius | 2m for 8 300mm wafer |
| Repeatability | 1% (1 sigma) on a 20m curvature mirror standard? |
| Accuracy | Better than 2.5% based on 8 20m radius curvature miror |
| Laser class | Laser Product Class 1 |
| Data compatibility | Measurement rosuts or graphs are exportable to spreadsheet programs like Excel” or to jpeg image files |
| Purging gas | Nitrogen, argon or forming gas |
| Computer | CPU: intl core iS or better Ram: 2Gb min hard drive: 17 optical drive: DVO RW USB Port (Min) 4 ethernet connections: 2 RJ-45 |
| Dimensions & weight | 39° x22 5″ x 24.5″ 350Ibs |
| Power | 208V; 20A, 1 phase |
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Comparison FSM128NT, FSM 500TC and FSM500TC-VAC
TOPIC | 128NT | 500TC | 500TC-VAC |
| T range | Room temperature | Room temperature up to 500°C | Room temperature up to 500°C |
Environment | Ambient | Inert gas | Inert gas Vacuum |
2D and 3D Stress Mapping | Automatic wafer rotation | Manual wafer rotation | Automatic wafer rotation optional |
Turn-around time | Minutes | Heating and cooling cycle typically hours (depending on process) | Heating and cooling cycle typically hours (depending on process) |
Options | Substrate thickness | Reflectivity | Thermal Desorption Spectroscopy (TDs) Reflectivity Film Thickness Resistivity |
Typical Application | Fast process control Stress Mapping | Process Development Annealing studies,CTE | Process Development Annealing outgassing studies, CTE |
Facilities | Power | Power, gas, exhaust | Power, gas, exhaust |